OREANDA-NEWS. Shvabe Holding patented its method of silicon p-i-n photodiode production, which increases photodetector threshold sensitivity and does not have domestic equivalents.

Silicon photodiodes are semiconductor devices that generate current when the joint of conductivity types is illuminated. PIN-photodiodes possess special characteristics, making them ideal detectors to be used in high-speed photometry and optical communication lines. They have a long service life, mechanical strength, and a compact size.

The new improved method of silicon PIN-photodiode production has been developed by the specialists of Shvabe Holding enterprise Shvabe - Orion Scientific and Production Association.

"This method helps to reduce dark currents of photodiodes and, accordingly, to decrease the shot noise, which in its turn reduces the noise of the photodetector and increases its threshold sensitivity. As a result the method improves the qualities of equipment, for example, increases the range capacity of laser rangefinders," explained the CEO of Orion Scientific and Production Association Anatoly Filachev.

One more feature of the new design is the decrease of the maximum temperature of the production processes from 1150 to 950°C, which leads to the reduction of dark current of photodiodes.

The customers of PIN photodiodes are enterprises that develop optical-electronic equipment using pulsed laser radiation. The photodiodes are used in photodetectors applied in various spheres of activity: construction, geodesy, geology, fiber-optic communication, etc. These appliances are used for the protection of borders, for fighting against criminals and terrorism, and during rescue operations to search for people in case of emergencies and natural disasters.